Strong electron irradiation hardness of 852 nm Al-free laser diodes

Abstract We have step-irradiated Al-free laser diodes with 1 MeV electrons at fluences from 10 14 up to 10 16 electrons/cm 2 . We measure at each step their L-I and I-V characteristics to evaluate the impact of irradiation on optical and electrical properties. We also irradiated a test structure incorporating 3 GaInAsP quantum wells and a thick GaInP cladding. Quantum wells photoluminescence measurements show a strong degradation of its intensity. However laser diodes properties remain essentially unchanged, due to a strong forward bias annealing effect.