Solidification purification method and apparatus of the metallic silicon

The present invention provides a method for purifying silicon metal and its solidification apparatus, while the productivity of the crystal is maintained at a high state, as compared with conventional more efficiently and reliably remove the impurity element is performed. Metal solidification silicon purification process, so that in the silicon molten liquid metal in the mold is solidified purification apparatus and a direction of removing the solidified metal impurity elements in silicon, wherein the molten liquid in the solidification interface used-side temperature gradient (G ), parts of a set of solidifying the middle of molten liquid impurity element concentration (Cm is), the solidification speed (V) represented by the subcooling index {VOGC = (V / G) × Cm} with respect to silicon from metallic silicon - impurities subcooling threshold set parts gradient diffusion coefficient (m) and an impurity element liquidus state in FIG read element (D) represented by {0.59 (D / m)}, {1/10 to maintain 0.59 (D / m)} ≤VOGC

Keywords:

• Subcooling
• Liquid metal
• Impurity
• Liquidus
• Analytical chemistry
• Temperature gradient
• Materials science
• Metal
• Mold
• Silicon

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