Resistance reduction of CNTs on 300-mm wafer by using two precursors with different growth methods

The process conditions for improving the electrical properties of carbon nanotubes (CNTs) were investigated by using a blanket-structure method for quantifying CNT resistance independently. The growth mechanism of CNTs formed with two different gas precursors was investigated from the viewpoint of crystallinity, growth-length uniformity, and resistance. Although the formed CNTs still require further improvements to obtain a ballistic transport property, it was found that the resistance of CNTs is reduced by using a two-step growth method that produces a multi-wall CNT structure and a uniform micrometer-order growth length.