Effect of leakage current through ferroelectric and insulator on retention characteristics of metal-ferroelectric-insulator-semiconductor structure

Abstract Retention characteristics of MFIS (metal-ferroelectric-insulator-semiconductor) structures have been investigated theoretically and experimentally. The simulated retention characteristics have indicated that reducing current through the ferroelectric layer is very effective to make the retention time long. In order to reduce the current through the ferroelectric layer, an MFIS with an improved ferroelectric layer and an M-I-FIS (metal-insulator-ferroelectric-insulator-semiconductor) have been investigated theoretically. Both of them have given good retention characteristics. Experimentally, retention characteristics of MFIS have been much improved by annealing, which is considered to suppress the current density in the ferroelectric layer, although those of M-I-FIS have been improved a little.