Ultrafast Atomic Layer Deposition of Alumina Layers for Solar Cell Passivation

An ultrafast atomic layer deposition technique is presented, based on the spatial separation of the half-reactions, with which alumina layers can be deposited with deposition rates of more than 1 nm/s. The deposition rate is limited by the water half-reaction, for which a kinetic model has been developed. The alumina layers showed excellent passivation of silicon wafers for solar cell applications. Based on this concept, a high throughput ALD deposition tool is being developed towards throughputs of up to 3000 wafers/hr. ©The Electrochemical Society.