Tuning the mode-splitting of a semiconductor microcavity with uniaxial stress
2021
A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum technology applications, a method for controlling the mode-splitting is important. In this work we use an open microcavity composed of a "bottom" semiconductor distributed Bragg reflector (DBR) incorporating an n-i-p heterostructure, paired with a "top" curved dielectric DBR. We measure the mode-splitting as a function of wavelength across the stopband. We demonstrate a reversible in-situ technique to tune the mode-splitting by applying uniaxial stress to the semiconductor DBR. The method exploits the photoelastic effect of the semiconductor materials. We achieve a maximum tuning of $\sim$11 GHz. The stress applied to the heterostructure is determined by observing the photoluminescence of quantum dots embedded in the sample, converting a spectral shift to a stress via deformation potentials. A thorough study of the mode-splitting and its tuning across the stop-band leads to a quantitative understanding of the mechanism behind the results.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
36
References
0
Citations
NaN
KQI