Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte

The field-effect method in electrolyte was used to study the zero-gap semiconductor HgSe-electrolyte (saturated solution of KCl) system by measuring the capacitance-voltage and current-voltage characteristics. A technique for the estimation of the matrix element P of the quasi-momentum operator from capacitance-voltage characteristics was proposed, and the value of P for HgSe was determined at T=295 K.