Research on the Photoelectric Properties of Flexible Photodetectors

Flexible electronics has received significant attention in the fields of wearable communication devices, flexible sensors, flexible displays and biomedical devices. In order to solve the issues on flexible photodetectors, such as high-performance a-IGZO TFT with photoelectric properties, and especial for high on/off current ratio and spectral sensitivity, the photoelectric properties of flexible photoelectric devices with bottom gate electrode structures was investigated based on the ATLAS of SILVACO software. Flexible active layer amorphous indium gallium zinc oxide thin film transistor under different material thickness ratios of active layers was studied by simulation methods. The results show that the double active layer has better electrical performance than the single active layer thin film transistor, especially when the thickness ratio of IZO to IGZO material is 1:7 at total thickness of 40nm; the spectral response analysis shows that the maximum effect on the turn-off current gain of the optical device is when the wavelength is 300nm and the integral sensitivity of photoelectric devices is the highest. The results show that it is sensitive to ultraviolet light, and as perovskite is applied in photo-absorption layer, it can increase the light wave detection range from250-350nm to 200-500nm. The results will help the study of perovskite and be expected to be applied in military communication, space science, environment detection.