Temperature measurement of GaN-based blue-violet laser diodes in operation by Raman microprobe

Blue-violet GaN-based laser diodes have been characterized by microscopic Raman scattering to obtain temperature distributions in the chip during operation. The local temperature increased steeply in the vicinity of the light-emitting layer at distance < ∼20 μm. At injection current I = 120 mA with laser output of 150 mW, the local temperature at the light emitting layer was about 50 °C higher than that of the chip mount, 25 °C. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)