Mass transfer in “metal layer–silicon substrate” systems under the action of compression plasma flows

Abstract Redistribution of components in surface layers of “metal-on-silicon” system under the action of compression plasma flows (CPF) with energy density 3–16 J/cm 2 are studied experimentally by SEM, AES. Mechanisms of heat and mass transfer are simulated by numerical solving of heat and mass transfer equations. The suggested model of mass transfer takes into account convective motion in the melt surface layer and temperature dependence of substance parameters. It provides dependence of metal penetration depth and its concentration on CPF energy density and convection velocity. Results of simulations are in accordance with experimental data; therefore, the proposed model enables to choose appropriate treatment modes for the formation of metal-doped silicon layers with controlled thickness and elemental composition.