Geometry Independent Hole Injection Current Model of GaN Ridge HEMTs

A drain current model of AlN/GaN based ridge (GIT) HEMTs has been developed for source-field-plate structures. The generation mechanism and the geometry independent equations of the hole injection current are developed with Boltzmann Function. Because the current simulations show good agreements with the measurements in multi-geometries, the model can be applied to ridge HEMTs to design power supply circuits.