Breakdown mechanism for the thin EOT Dy 2 O 3 /HfO 2 dielectrics

The intrinsic time dependent dielectric breakdown (TDDB) of the thin bilayered Dy 2 O 3 /HfO 2 gate oxide has been studied. A physical based breakdown model has been developed and can be used to predict the lifetime for the lower stress voltage and extract the defect density by introducing the effective oxide thinning model. This model has also been extended to include temperature dependency and the effective activation energy is calculated.