Inelastic electron tunneling spectroscopy of Si MIS structures with ultrathin thermal silicon nitride and thermal silica

Tunneling in boron-doped p-type silicon-insulator-semiconductor (MIS) tunnel junctions is studied at low temperatures by measuring the second derivative (d2I/dU2) of the current—voltage characteristics as function of applied bias voltage (U). The vibrational spectra of the thermal silica (thickness ≈ 2 nm) and the thermal silicon nitride (thickness ≈ 3 nm) is studied. [Russian Text Ignored].