Gallium oxide based power and RF device technologies

Beta-Ga2O3 has emerged as a promising ultra-wide-bandgap semiconductor system for next generation power, and RF applications. In this talk, we will present our recent results on gallium oxide based high breakdown voltage MOSFETs and scaled gate length RF devices. The large bandgap of Ga2O3 leads to a high critical field strength. This high field strength in combination with high room temperature mobility and calculated electron velocity leads to a higher Baliga’s Figure of Merit (BFoM) and Johnston Figure of Merit (JFoM) than commercial widebandgap technologies. Additionally, the large bandgap also enables high temperature operation and radiation hardness making it attractive for harsh environment applications. We will present our work on the lateral MOSFETs with improved field plate design which show record high breakdown voltages. DC and pulsed I-V characteristics of 100 nm gate length Ga2O3 MOSFET will be reported. DC-RF dispersion and passivation technology will be discussed.