Design and study of a photosensitive interface: a derivatized n-type silicon photoelectrode

We previously found that the photoanodic decomposition of n-type Si can be suppressed by the competitive oxidation of ferrocene in EtOH solution with (n-Bu/sub 4/N)ClO/sub 4/ as the supporting electrolyte. Such studies have led us to suspect a strong interaction of the stabilized photoanode with the reductant added to the solution. We now report the covalent attachment of a photoelectrochemically active ferrocene derivative to the surface of n-type Si which passivates the electrode to decomposition (SiO/sub 2/ formation). This study opens a new avenue for the stabilization of semiconductor/liquid junction photocells.