Monolithically Integrated III-Sb Superluminescent Light Emitting Diodes on Si (100) Substrates

Diana L. Huffaker,Ganesh Balakrishnan,M. Mehta,M. N. Kutty,P. Rotella,S. Krishna,L. R. Dawson

Monolithically Integrated III-Sb Superluminescent Light Emitting Diodes on Si (100) Substrates

2007

Diana L. Huffaker
Ganesh Balakrishnan
M. Mehta
M. N. Kutty
P. Rotella
S. Krishna
L. R. Dawson

We report on recent monolithically integrated III-V on Si device developments including a room-temperature, superluminescent light emitting diode. The integration scheme is enabled by spontaneously-formed, interfacial misfit arrays (IMF).

Keywords:

Optoelectronics
Light-emitting diode
Capacitive sensing
Physics
Gallium arsenide
Wafer bonding
Optics
Etching
Thermal expansion
Quantum well
Silicon

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