GaSbBi metal-semiconductor-metal photodetectors for mid-infrared sensing

We demonstrate the operation of GaSbBi metal-semiconductor-metal photodetectors with different Bi concentration and compare performance with a reference GaSb device. A GaSbBi MSM-PDs is shown to have a 220 nm wavelength extension in cut-off wavelength, with 2.9% bismuth concentration, compared to the reference device. We also investigate the influences of electrode geometry and size on the final device performance.