Cubic Pyrochlore Bismuth Zinc Niobate Thin Films for Antifuse Applications

Characteristics of a novel antifuse structure with cubic pyrochlore bismuth zinc niobate (BZN) thin film are investigated. A structure of Ti/Pt/BZN/Al for the BZN antifuses was proposed. The influence of various electric field directions, which were used for rupturing and programming the antifuses, on the BZN antifuse was analyzed, and the electric field direction of up to down was opted to program the antifuses. Excellent properties of the BZN antifuses were illustrated, including low leakage current, high off-state resistance, low programming voltage and time, moderate programming current, low on -state resistance, and tight distribution of on-state resistance. The BZN antifuse will be the most promising alternative to the gate oxide antifuses.