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Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor
Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor
2000
S. Ortolland
N. G. Wright
C. M. Johnson
Andrew P. Knights
P. G. Coleman
C. P. Burrows
A.J. Pidduck
Keywords:
Bipolar junction transistor
Residual
Electronic engineering
Materials science
Optoelectronics
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