The Deposition of Ru and RuO2 Films for DRAM Electrode

Ru and RuO2 films were deposited from Torus, a blend of RuO4. At low hydrogen dose RuO2 films were deposited at 200oC. With sufficient dosing of hydrogen, Ru films were obtained; either a high enough hydrogen pressure or plasma was used. Process temperatures between 100oC and 250oC were explored. At 100oC the process behaves like ALD, while at 200oC thermal decomposition is dominating. Above 200oC the decomposition of RuO4 increases rapidly. The deposited films are smooth and with low impurities.