A method for manufacturing a semiconductor device which is capable of detecting a dynamic amount

A method for manufacturing a semiconductor device comprising a semiconductor substrate (10) in which an insulating layer (13) on a first semiconductor layer (11) is laminated, and a second semiconductor layer (12) on the insulating layer (13) is layered, and a movable portion (20) is formed in the second semiconductor layer (12) which is displaceable in response to an applied dynamic quantity, the method comprising the steps of: Preparatory semiconductor substrate (10); Forming a trench (14) in order to delimit the movable portion (20) within the prepared semiconductor substrate (10), so that the trench (14), the insulating layer (13) from a surface of the second semiconductor layer (12) reaches forth; and Forming said movable section (20) by performing dry etching on the semiconductor substrate (10) with trained trench (14), wherein forming said movable section (20) includes: Loading the at the bottom of the trench (14) lying insulating layer (13) while performing the dry etching, in order to force the etching ions dry etching, ...