Effect of the carrier gas and the group-V precursor on the DEZn doping efficiency for InP and In0.54Ga0.46As in LP-MOVPE

Abstract The effect of the carrier gases H 2 or a N 2 /H 2 (90%/10%) mixture with the group-V precursors TBA, TBP, PH 3 and AsH 3 on the distribution coefficient of Zn in InP and In 0.54 Ga 0.46 As has been investigated. Changing from PH 3 to TBP as the group-V precursor increases the incorporation efficiency of Zn, whereas the opposite effect is observed for the change from AsH 3 to TBA. Furthermore, for In 0.54 Ga 0.46 As and InP the distribution coefficient of Zn increases and is less sensitive to V/III ratio variations when using N 2 /H 2 (90%/10%) as carrier gas instead of H 2 .