Influence of amorphization depth on sheet resistance in shallow junction formation with B cluster implantation

We verified that thicker amorphized layer gives rise to lower R s under the same X j and boron concentration in B cluster implantation with MSA. The increase in R s due to the decrease in the boron dose is most significant for B 18 H X , because amorphized depth by B 18 H X implantation drastically varies compared to that for B implantations with/without Ge PAI.