Feature-size-level chemical mechanical polishing process simulation method considering polishing solution influences

The invention belongs to the field of semiconductor manufacturability design, and particularly relates to a feature-size-level chemical mechanical polishing process simulation method considering polishing solution influences. According to the method, small particles are adopted for representing process materials in chemical mechanical polishing, an NS fluid mechanics equation is used for representing interaction between the particles, and a smoothing particle fluid dynamics method is used for obtaining a polishing simulation result through calculation. Simulation can be completed only according to process material parameters without depending on an empirical model, and the method has the advantage of being high in generality. Meanwhile, in the simulation process, the actual physical process among a polishing pad, a polishing solution, polishing particles and a silicon wafer is simulated, and the precision is high. All kinds of process conditions can be effectively simulated, and effective reference is provided for optimization of the chemical mechanical polishing technological process.