Modeling of High-Power Resonant Tunneling Diodes through the Non-Equilibrium Green’s Function Method

In this paper, we studied the accuracy of Atlas commercial technology computer-aided design (TCAD) numerical simulation software of Silvaco Inc. in predicting the electrical behaviour of high-power InGaAs/AlAs double-barrier resonant tunneling diodes (RTDs). By comparing quantum transport numerical simulations based on the non-equilibrium Green’s function formalism with experimental results, we show that the tool accurately predicts the peak current density, peak voltage, and the voltage extent of the negative differential resistance (NDR) region of the diode static current-voltage (IV) characteristic, which are crucial quantities in high-power RTD design. Our results indicate that the tool can be reliably used to design high-power RTD-based oscillators at terahertz (THz) frequencies.