Highly enhanced ultraviolet photosensitivity and recovery speed in electrospun Ni-doped SnO2 nanobelts

Precisely controlled Ni-doped SnO2 (NSO) nanobelt arrays are synthesized and assembled via electrospinning. In comparison to pristine SnO2 nanobelts, enhanced photosensitivity (∼103) as well as recovery speed (∼1 s) is obtained in NSO nanobelts. The mechanism is clarified by the compensation effect of acceptor impurity Ni, which not only promotes the oxygen-surface interaction but also introduces trapping centers in SnO2 matrix. The reduced grain size (∼4 nm) along with increased depletion layer thickness also benefits the photosensitivity of NSO nanobelts. These improved photoresponse properties make the NSO nanobelt a promising candidate for high-performance ultraviolet detectors.