LED chip and inverted-packaging manufacturing method thereof

The invention discloses an LED chip and an inverted-packaging manufacturing method of the LED chip. The inverted-packaging manufacturing method of the LED chip comprises the following steps that S1, a Mesa region is manufactured; S2, SiO2 deposition and etching are carried out; S3, a NiAg metal layer is manufactured; S4, a protective layer is manufactured; S5, a SiO2 layer is removed; S6, a SiO2 protective layer and a metal electrode are manufactured. According to the inverted-packaging manufacturing method of the LED chip, before deposition of the NiAg metal layer is carried out, SiO2 deposition and etching are carried out, the SiO2 layer with chamfers is manufactured, then the NiAg metal layer is manufactured, growth of the protective layer is carried out, and a lift-off process is carried out through removal of the SiO2, so that the problem that in a traditional lift-off process, Ag is prone to oxidization is solved.