A Simple, Accurate Capacitance-Voltage Model of Undoped Silicon Nanowire MOSFETs

This paper presents a simple, accurate charge and capacitance model for undoped cylindrical gate-allaround (GAA) silicon-nanowire (SiNW) MOSFETs. The charge and capacitance model is derived from our surface-potential-based current model in which major non-ideal effects, such as velocity saturation, mobility degradation, channel-length modulation, and draininduced barrier lowering, are included. Based on proper approximations, simple charge and capacitance expressions are obtained and the validity is confirmed by comparison with numerical simulations.