Imaging detector and manufacturing method therefor

The invention discloses a manufacturing method for an imaging detector, and the method comprises the steps: etching a sacrificial layer on a substrate, and forming a through hole which enables a first interconnection to be exposed; placing a conductive material in the through hole, and forming a second interconnection hole; forming a metal layer; forming a second dielectric layer on the metal layer; removing the second dielectric layer and the metal layer of a partial region through a dry etching method, enabling four adjacent second interconnection holes to be connected to a position above a reflection layer through four metal lines and the second dielectric layers on the four metal lines, and connecting the metal lines of the other two diagonal second interconnection holes covered by the second dielectric layer; Moreover, the dry etching method does not have an ashing step, and a thermistor is formed on the second dielectric layer corresponding to the reflection layer. The thermistor covers the exposed metal lines extending towards a part above the reflection layer. The method modifies the drying etching method, removes the ashing step, and achieves the etching of silicon nitride and the metal layer at the same step through the step of etching a silicon nitride material.