Increased Latch-up Susceptibility of ICs Using Reverse Body Bias
2020
This work presents a previously undocumented cause of latch-up in circuits with reverse body bias capability. This latch-up phenomenon was noticed first during power-on ESD testing. The latch-up risk is determined by the biasing scheme and power delivery network. SPICE simulations are used to confirm the cause and evaluate counter-measures.
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