Interfacial N Vacancies in GaN/(Al,Ga)N/GaN Heterostructures

We show that $\mathrm{N}$-polar $\mathrm{Ga}\mathrm{N}$/$(\mathrm{Al},\mathrm{Ga})\mathrm{N}$/$\mathrm{Ga}\mathrm{N}$ heterostructures exhibit significant $\mathrm{N}$ deficiency at the bottom $(\mathrm{Al},\mathrm{Ga})\mathrm{N}$/$\mathrm{Ga}\mathrm{N}$ interface, and that these $\mathrm{N}$ vacancies are responsible for the trapping of holes observed in unoptimized $\mathrm{N}$-polar $\mathrm{Ga}\mathrm{N}$/$(\mathrm{Al},\mathrm{Ga})\mathrm{N}$/$\mathrm{Ga}\mathrm{N}$ high electron mobility transistors. We arrive at this conclusion by performing positron annihilation experiments on $\mathrm{Ga}\mathrm{N}$/$(\mathrm{Al},\mathrm{Ga})\mathrm{N}$/$\mathrm{Ga}\mathrm{N}$ heterostructures of both $\mathrm{N}$ and $\mathrm{Ga}$ polarity, as well as state-of-the-art theoretical calculations of the positron states and positron-electron annihilation signals. We suggest that the occurrence of high interfacial $\mathrm{N}$ vacancy concentrations is a universal property of nitride semiconductor heterostructures at net negative polarization interfaces.