Design and Fabrication of RTD/HEMT Series Connection ResonantTunneling Transistor

Based on the conception of RTD/HEMT series connection resonant tunneling transistors,an RTD/HEMT monolithic integration material structure was designed and grown by molecular beam epitaxy.RTT was fabricated using wet chemical etching,metal lift-off,mass isolation,and air bridge technologies.The device has a distinct gate-controlled negative differential resistance.The maximal peak-to-valley current ratio (PVCR) of the forward direction connection RTT is about 2.2 and the maximal PVCR of the backward direction connection RTT is about 4.6.This experiment lays a foundation for the optimization of RTT and RTD/HEMT monolithic integration circuit development.