Fabrication of light emitting diodes transferred onto different substrates by GaN substrate separation technique

We have successfully transferred GaN films grown on high crystalline quality GaN substrates onto different substrates, where we have developed a laser lift-off technique with a green laser and an absorption-enhanced InGaN layer as a sacrificial layer (a layer to absorb laser beams). We have also achieved an output power of 13.0 mW at 20 mA with a wavelength of approximately 410 nm and an external quantum efficiency of 21.6% for light emitting diodes transferred on Si substrates by using this method (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)