Two dimensional Sr silicate grown on Si(001) studied using X-ray Photoelectron Spectroscopy

We used X-ray Photoemission Spectroscopy (XPS) to study the structural and chemical properties of SrO grown by Molecular Beam Epitaxy (MBE) on Si(001) substrates in the following conditions: (i) low temperature growth at 30°C and (ii) high temperature growth at 500°C. The crystalline quality of the film deposit was controlled in-situ by Reflection High-Energy Electron Diffraction (RHEED). The results show the growth, at low temperature of epitaxial SrO; and at high temperature the formation of crystalline silicate.