Longitudinal carrier density profiling in semiconductor lasers via spectral analysis of side spontaneous emission

A combined experimental and theoretical approach to measuring the variation in carrier density along the length of a semiconductor laser is developed. It is shown that by following the rate of increase of the principal spectral peak, rather than monitoring the optical power at a fixed energy, measurements can be made less susceptible to the effects of heating in the sample. Experimental results showing the development of the longitudinal carrier density profile with injected current are presented and, when compared with the results of self‐consistent modeling, provide insights into the internal operating mechanisms of the laser.