Low-Loss Heterogeneous Integrations With High Output Power Radar Applications at W-Band

This study presents a design of a 94-GHz high-performance and highly compact frequency-modulated continuous-wave radar sensor. In this sensor, an X-band CMOS-based all-digital phase-locked loop chip, W-band SiGe-based transceiver monolithic microwave integrated circuit (MMIC), and W-band GaN-based MMIC power amplifier (PA) are heterogeneously integrated (HI). Each part of the 130-nm bipolar complementary metal-oxide-semiconductor (BiCMOS) SiGe-based transceiver MMIC is designed to include a low-noise amplifier, PA, octupler, mixer, and lange coupler. The fabrication process of our in-house silicon-based MEMS photosensitive composite film is developed to provide very high-density integration and very low insertion loss of interconnections between chips. The HI front end of the radar sensor is measured on-wafer with a high output power of 22 dBm. Moreover, a low double-sideband noise figure (NF) of 10.2 dB is obtained. Bonding-substrate integrated waveguide (SIW)-WG transitions between the heterogeneously integrated front end and the antenna are specially designed and verified. A 2.3-dB degradation is observed, where 19.7 dBm is measured at the transmitter WG WR-10-flange. Thus, the sensor offers a 55-dB dynamic range at a 2-m position with an expectation of a long-distance target-detection range. The radar sensor has an 11.7-cm range resolution and is only 60 x 40 x 8 mm³ in size, with a weight of only 78 g.