Very high quantum efficiency GaSb mesa photodetectors between 1.3 and 1.6 μm

In this letter very high quantum efficiency GaSb mesa photodiodes with AlxGa1−xSb windows are reported for the first time. External quantum efficiencies (ηext) of ≃60% at zero bias and of ≃70% at −1 V near 1.3 μm have been obtained without antireflection coatings. More than 80% of the devices from several wafers exhibited ηext⩾50% at λ≃1.3 μm.