Rear emitter n-type passivated emitter, rear totally diffused silicon solar cell Structure

In a rear emitter n-type passivated emitter, rear totally diffused cell design, the boron diffused emitters are placed at the rear surface of n-type silicon substrates. This has significantly improved the cell efficiency up to 22.7%. A 170μm thin float zone substrate and a 1.5Ωcm modest substrate resistivity helped these cells to achieve highly efficient carrier transportation to the rear emitter. These 22cm2 large cells are scribed off from the silicon wafer, representing efficiencies for applicable devices. These rear emitter cells also demonstrated stable performances both under one-sun illumination and after a few months storage in nitrogen.