Integration of copper with low-k dielectrics for 0.13 /spl mu/m technology

The integration of Cu with low-k dielectrics poses a number of challenges. In this paper, we describe yield issues associated with integration of three different low-k dielectrics; FSG (fluorosilicate glass), OSG (organosilicate glass), and polymers. Process issues that are discussed include patterning of the dielectrics, cleaning of the Cu surface, and Cu polishing.