Influence of Doping Concentration On the Outputs of a Bent ZnO Nanowire

In this article, the governing equation on electric potential is established by coupling both the semiconducting characteristics and the piezo-effect property of a ZnO nanowire (ZNW). Carrier redistributions are solved for different doping concentrations while considering the effect of both types of charge carriers. The reason for the semiconducting characteristics of a ZNW to induce electric leakage in energy-harvesting is illustrated in detail and a proper initial carrier concentration, $n_{0}$ or $p_{0}$ , is obtained as follows: $\log (n_{0} /n_{i}) for a n-type ZnO fiber and $\log (p_{0} /n_{i}) for a p-type one under the intrinsic carrier concentration $n_{i} =1.0\times 10^{16}({1/\textrm {m}^{3}})$ , which is of significance in both the design and the practical applications of piezotronics and piezo-phototropic devices.