Investigation of conduction mechanism in Ti/Si 3 N 4 /p-Si stacked RRAM

The conduction mechanism in Ti/Si 3 N 4 /p-Si memory stack is described. In order to analyze the conduction mechanism, we measured the I-V characteristics in voltage sweep mode and conducted I-V curve fitting. And the temperature dependence in Ti/Si 3 N 4 /p-Si stacked cell is also investigated because we cannot claim the conduction mechanism just based on the I-V curve fitting. From I-V curve fitting and temperature measurement data, we found that space charge limited conduction (SCLC) model is well fitted in both high resistance state (HRS) and low resistance state (LRS).