High-quality materials and heterostructures on (111)B GaAs

We report the successful growth of high‐quality molecular‐beam epitaxy (MBE) GaAs, AlGaAs, AlGaAs/GaAs modulation‐doped heterostructures, GaAs/InGaAs/GaAs quantum well, and AlGaAs/InGaAs multiple quantum wells (NQW) on GaAs (111)B substrates. Modulation‐doped heterostructures show a 77‐K mobility of 145 500 cm2/V s with a sheet density of 5.0×1011 cm−2. Photoluminescence of (111)B GaAs indicates a lower carbon incorporation than achieved on (100) substrates. The high material quality obtainable at low growth temperatures for (111)B growth will be advantageous for laser diode and heterostructure field‐effect transistor applications. AlGaAs/InGaAs MQW on (111)B are comparable in the photoluminescence linewidths to those on (100) GaAs.