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Development of Silsesquioxane-type Gate Insulating Films and Properties of Its-based Organic Thin Film Transistors
Development of Silsesquioxane-type Gate Insulating Films and Properties of Its-based Organic Thin Film Transistors
2008
Murakami Shuichi
Hamada Takashi
Tomatsu Kenji
Ueda Yusuke
Yamazaki Saori
Nagase Takashi
Kobayashi Takashi
Matsukawa Kimihiro
Naito Hiroyoshi
Keywords:
Nanotechnology
Chemical substance
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Science, technology and society
Thin-film transistor
Silsesquioxane
Materials science
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