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Molecular Beam Epitaxy of Wide Bandgap Al(Ga)N and h-BN for Deep-Ultraviolet Optoelectronics
Molecular Beam Epitaxy of Wide Bandgap Al(Ga)N and h-BN for Deep-Ultraviolet Optoelectronics
2020
David Arto Laleyan
Keywords:
Aluminum gallium nitride
Wide-bandgap semiconductor
Ultraviolet
Boron nitride
Optoelectronics
Light-emitting diode
Molecular beam epitaxy
Materials science
Band gap
Correction
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