FORMATION OF Y- AND T-JUNCTION Ge NANOWIRES BY VAPOR–LIQUID–SOLID MECHANISM

A vapor–liquid–solid method has been used to grow Ge nanowires on Au-coated Si(100) substrates with diameters ranging from 30–80 nm. The nanowires have been found to form Y- and T-junctions along with the growth of straight nanowires of length up to 10 μm. X-ray diffraction and Raman analyses support the formation of a core-sheath Ge–GeO2 structure in consistent with the observation made by transmission electron microscopy.