Nanometer-scale selective epitaxy of InAs quantum dots via indium segregation

We report on recent results utilizing pseudomorphic In/sub x/Ga/sub 1-x/As films in order to affect the growth, organization and structure of InAs quantum dots. Pseudomorphic InGaAs films exhibit interesting properties due to strain effects. Given time, In/sub x/Ga/sub 1-x/As films release various amounts of indium by surface segregation. This segregated layer of InAs can act to decrease the additional InAs necessary to reach the 2D to 3D transition coverage. This process enables an oxideless, single growth step of quantum dots suitable for use in quantum dot cellular automata computing and other low dimensional electronic systems.