Ferromagnetic GaN:MnAlSi nanowires

The fabrication of crystalline Al-codoped GaN:Mn nanowires with a Mn doping rate of approximately 7at.% is reported. The magnetism measurements show that the Curie temperature is above 350K. X-ray and electron diffractions do not show the presence of any secondary magnetic phases. The electrical transport measurement indicates that the nanowires are of n-type semiconductor.