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Acemap > Paper > C-6-6 MMGeを用いたSi(001)-2°off基板上での高密度SiC,Geナノドット形成(C-6.電子部品・材料,一般講演)

C-6-6 MMGeを用いたSi(001)-2°off基板上での高密度SiC,Geナノドット形成(C-6.電子部品・材料,一般講演)

2006 
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