Test Setup for Loss Measurements of Inductive Components by using GaN-HEMTs

This paper describes and verifies a measurement setup based on GaN semiconductors to characterize losses of inductive components used in switched-mode power supplies. Due to insufficient datasheet parameters, especially core losses occurring in inductive components cannot be accurately calculated by simulation. Furthermore, proximity losses within windings are difficult to obtain due to inhomogeneous field distributions within inductive components. Therefore, the ability to measure losses of inductive components plays an important role in the development of power supplies. Conventional test setups use the DUT’s AC voltage and current to obtain the losses. Based on [1] this paper designs and verifies a circuit that allows for loss measurements of inductive components by only employing DC voltage measurements. After a presentation of the measuring principle and the resulting test setup realization, it is verified by measuring the well-defined losses of an air coil.