Investigation of data retention under current bias for phase change memory

With Phase-change memory (PCM), information can be stored as different resistance states even when not powered. In order to accurately characterize the reliability of PCM devices, data retention has to be tested carefully. In this paper, a new test method is applied to measure the data retention of T-shaped PCM devices. This method makes it possible to accelerate crystallization in the amorphous area by using current bias. The new method works based on the field-induced crystallization theory, and could be able to gather fast and detailed information about high-resistance state’s failure process, and at the same time, it could avoid issues related to high temperature. Experimental data for T-shaped PCM devices based on Ge 2 Sb 2 Te 5 are presented and analyzed. An exponential trend-line of failure time t versus reciprocal bias current 1/I shows only negligible deviation of the measured data points, enabling the extrapolation of the retention behavior for ten-year lifetime. A maximum disturb current value of 5.08 μA is extracted to guarantee the ten years data retention requirement for PCM applications.